Hydroxyl-Free Buffered Dielectric for Graphene Field-Effect Transistors Original Research Article Carbon, Available online 30 January 2015, Pages Zhi Jin, Peng Ma, Shaoqing Wang, Songang Peng, Dayong Zhang, Jingyuan Shi, Jiebin Niu, Guanghui Yu, Xuanyun Wang, Mei Li | Room temperature dry processing of patterned CVD graphene devices Original Research Article Carbon, Available online 30 January 2015, Pages Ather Mahmood, Cheol-Soo Yang, Jean-François Dayen, Serin Park, Mutta Venkata Kamalakar, Dominik Metten, Stéphane Berciaud, Jeong-O Lee, Bernard Doudin
Graphical abstractA multi-step stencil lithography approach for patterning CVD-grade graphene sheets is used as a dry and low temperatures devices fabrication process. Quantum hall effect persist in samples exposed to the critical ion milling process. Optical and electrical signatures of high quality graphene validate this approach to make chemical and flexible electronics compatible large scale devices.
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